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1100-1400MHz 500W Compact High-Power RF Amplifier for Advanced Communication Systems
Description
The module is designed for commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package.
Specification
Typical performance at +48V DC +25oC, and in a 50Ω system.
RF / ELECTRICAL | ||||
PARAMETER | MIN | TYP. | MAX | UNIT |
Operating Frequency | 1100 | 1400 | MHz | |
RF Pulsed signal (With External modulation signal) | ||||
RF INPUT | 0 | dBm | ||
Duty cycle | 10 | % | ||
Pulse width | 20 | us | ||
P-sat Output Power | 57 | dBm | ||
Power Gain | 57 | dB | ||
Power Gain Flatness | 2 | dB | ||
Spurious Signals | -55 | dBc | ||
Harmonic Signals | -20 | dBc | ||
Pulse delay(PA ON/OFF time) | 1 | us | ||
Input VSWR | 2 | -- | ||
In-Out impedance | 50 | Ω | ||
Operating Voltage | 48 | 50 | V DC | |
Average Current@ 10% cycle | 3 | 4 | A | |
MECHANICAL | ||
PARAMETER | VALUE | UNIT |
Dimensions (L x W x H) | 200x150x30 | mm |
RF Connectors (Input / Output) | SMA- KFD/ N- KFD | -- |
DC / Control Connector | D-SUB 7W2 | -- |
Cooling | Consider heat dissipation with the system | -- |
Mounting | φ3.5-4 Thru Hole | -- |
Weight | ≤2 | kg |
ENVIRONMENTAL / PROTECTIONS | |||
PARAMETER | MIN | MAX | UNIT |
Operating Temp. (Housing Temp.) | -20 | +60 | °C |
Humidity Range | 0-95 | % | |
Connector Definition | ||
AMPLIFIER CONNECTOR TYPE: | D-SUB 7W2 | |
TRIAD CABLE PART NUMBER: | —— | |
NUMBER | Definition | DESCRIPTION |
A1 | VDD | +48V |
A2 | GND | GND |
1 | Amp Enable | Enable : TTL “Low”, Disable : TTL “High” (Low : 0~0.5V, High : 2.5~5V) (Pulse modulation synchronous signal, switch time less than 1us) |
2 | GND | Ground |
3 | Output Power monitoring | Output Power Detection (Output pulsed wave analog voltage) @The peak of the pulse wave is relative to RF power (0.1 ~ 3.0V relative to +30 dBm ~ +57dBm) |
4 | Reverse Power monitoring | Reverse Power Detection (Output pulsed wave analog voltage) @The peak of the pulse wave is relative to RF power (0.1 ~ 3.0V relative to +30 dBm ~ +57dBm) |
5 | Temp monitoring | Analog voltage relative to module temperature @10mv/℃:V=0.5+10mv*△℃) (0 .75V relative to 25℃) |








